CHEMICAL MECHANICAL POLISHING PAD COMPOSITE POLISHING LAYER FORMULATION

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a p...

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Bibliographische Detailangaben
Hauptverfasser: Miller Jeffrey B, Stack Marc R, Hendron Jeffrey James, Brugarolas Brufau Teresa, Tran Tony Quan, Lugo Diego, Kozhukh Julia, Qian Bainian, Jacob George C
Format: Patent
Sprache:eng
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Zusammenfassung:A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.