SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the fir...

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Bibliographische Detailangaben
Hauptverfasser: HSIEH CHING-HUA, WU KAI-DI, KUO CHENG-YU, KU CHIN-YU, LEI YI-YANG, CHANG KUO-PIN, HUANG ISAAC, LIU CHUNG-SHI, YU CHEN-HUA, YANG SHENG-PIN, LIU KUOIO, LIAO DE-DUI, HUANG TSUNG LUNG, KALNITSKY ALEXANDER, WANG HSIING
Format: Patent
Sprache:eng
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Zusammenfassung:A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.