PATTERN TREATMENT METHODS

Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the blo...

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Bibliographische Detailangaben
Hauptverfasser:	Park Jong Keun, Li Mingqi, Jain Vipul, Zhou Huaxing, Hustad Phillip D, Sung Jin Wuk
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY CINEMATOGRAPHY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FILLING PASTES HOLOGRAPHY INKS MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.