MAGNETIC SHIELDING FOR MTJ DEVICE OR BIT

Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetic random access memory (MRAM) chip magnetic shielding and methods of forming a magnetic shield processed at the device-level are disclosed. The method includes providing a magnetic shield structure that is substantially surrounding a magnetic tunnel junction (MTJ) bit or device of a MTJ array within the MRAM region. The magnetic shield may be configured in the form of a cylindrical shield structure or magnetic shield spacer that substantially surrounds the MTJ bit or device. The magnetic shield structure in the form of cylindrical shield structure or magnetic shield spacer may include top and/or bottom plate shield. The magnetic shield structure in various forms and configurations protect the MTJ stack from external or local magnetic fields. The MTJ array is formed in the MRAM region and in between adjacent inter layer dielectric (ILD) levels of the upper ILD layer in the back end of line (BEOL) of the MRAM chip. This magnetic shielding method is applicable for both in-plane and perpendicular MRAM chips.