LIQUID COMPOSITION FOR ETCHING OXIDES COMPRISING INDIUM, ZINC, TIN, AND OXYGEN AND ETCHING METHOD

Provided is a liquid etching composition that etches an oxide comprising indium, zinc, tin and oxygen at a preferable etching rate, without the etching rate being changed much along with the dissolution of the oxide, and with no substantial generation of deposit, and corrodes wiring materials at suc...

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Bibliographische Detailangaben
Hauptverfasser:	SHIGETA Mari, YUBE Kunio
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PAINTS PHYSICS POLISHES SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	Provided is a liquid etching composition that etches an oxide comprising indium, zinc, tin and oxygen at a preferable etching rate, without the etching rate being changed much along with the dissolution of the oxide, and with no substantial generation of deposit, and corrodes wiring materials at such a low level to be ignorable. The present invention uses a liquid etching composition comprising (A) at least one selected from the group consisting of sulfuric acid, methanesulfonic acid, and a salt of any of these acids; and water; the liquid etching composition having a pH value of −1 to 3.