SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION

SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION

Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive mate...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Thomas David C, Milo Gary L, Levy Max G
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.