METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM Young-Dae, KIM Hong-Suk, CHO Yong-Seok, KIM Jung-Hwan, SHIN Hyun-Jin, LEE Sang-Hoon, LIM Hun-Hyeong, YANG Han-Vit
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.