METHOD FOR FORMING CRACK-STOPPING STRUCTURES
A crack-stopping structure includes a semiconductor wafer comprising a plurality of dies defined by a plurality of scribe line regions, a plurality of metal patterns formed in the scribe line regions, and a plurality of groups of through silicon holes (TSHs) formed in the scribe line regions. The wa...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A crack-stopping structure includes a semiconductor wafer comprising a plurality of dies defined by a plurality of scribe line regions, a plurality of metal patterns formed in the scribe line regions, and a plurality of groups of through silicon holes (TSHs) formed in the scribe line regions. The wafer further includes a front side and a back side, and the TSHs respectively include at least a bottom opening formed in the bottom side of the wafer. The groups of TSHs are formed between the metal patterns and the dies. |
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