System and Method for Focus Determination Using Focus-Sensitive Overlay Targets

A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Mieher Walter Dean
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION
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