System and Method for Focus Determination Using Focus-Sensitive Overlay Targets

A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection...

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Bibliographische Detailangaben
1. Verfasser:	Mieher Walter Dean
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION
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Beschreibung
Zusammenfassung:	A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.