System and Method for Focus Determination Using Focus-Sensitive Overlay Targets
A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Mieher Walter Dean |
description | A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016334716A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016334716A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016334716A13</originalsourceid><addsrcrecordid>eNqNyrEOgjAURmEWB6O-w02cSaw1OBuVuBiGwkwa-MEm0JLeKwlv76AP4HSG76yTwiwsGMn6lp6QV2ipC5Hy0LyZbhDE0XkrLniq2Pn-K6mBZyduBhUz4mAXKm3sIbxNVp0dGLtfN8k-v5fXR4op1ODJNvCQujLHg8q0Pp1VdlH6v-sDCnE3qA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>System and Method for Focus Determination Using Focus-Sensitive Overlay Targets</title><source>esp@cenet</source><creator>Mieher Walter Dean</creator><creatorcontrib>Mieher Walter Dean</creatorcontrib><description>A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161117&DB=EPODOC&CC=US&NR=2016334716A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161117&DB=EPODOC&CC=US&NR=2016334716A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mieher Walter Dean</creatorcontrib><title>System and Method for Focus Determination Using Focus-Sensitive Overlay Targets</title><description>A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEOgjAURmEWB6O-w02cSaw1OBuVuBiGwkwa-MEm0JLeKwlv76AP4HSG76yTwiwsGMn6lp6QV2ipC5Hy0LyZbhDE0XkrLniq2Pn-K6mBZyduBhUz4mAXKm3sIbxNVp0dGLtfN8k-v5fXR4op1ODJNvCQujLHg8q0Pp1VdlH6v-sDCnE3qA</recordid><startdate>20161117</startdate><enddate>20161117</enddate><creator>Mieher Walter Dean</creator><scope>EVB</scope></search><sort><creationdate>20161117</creationdate><title>System and Method for Focus Determination Using Focus-Sensitive Overlay Targets</title><author>Mieher Walter Dean</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016334716A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><toplevel>online_resources</toplevel><creatorcontrib>Mieher Walter Dean</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mieher Walter Dean</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>System and Method for Focus Determination Using Focus-Sensitive Overlay Targets</title><date>2016-11-17</date><risdate>2016</risdate><abstract>A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2016334716A1 |
source | esp@cenet |
subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION |
title | System and Method for Focus Determination Using Focus-Sensitive Overlay Targets |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T09%3A38%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Mieher%20Walter%20Dean&rft.date=2016-11-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016334716A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |