System and Method for Focus Determination Using Focus-Sensitive Overlay Targets

A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection...

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description A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PICTORIAL COMMUNICATION, e.g. TELEVISION
title System and Method for Focus Determination Using Focus-Sensitive Overlay Targets
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