METHOD FOR PRODUCING PHOTOELECTRODE

A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a...

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Bibliographische Detailangaben
Hauptverfasser:	TOKUHIRO Kenichi, NOMURA Takaiki, MIYATA Nobuhiro, TAMURA Satoru, SUZUKI Takahiro, HATO Kazuhito, TANIGUCHI Noboru
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13). When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).