APPARATUS AND METHOD FOR SELF BIAS IN GALLIUM NITRIDE (GaN) AMPLIFIERS

A wide bandgap voltage reference circuit generates a temperature stable negative bias reference voltage for use in wide bandgap circuits. The reference circuit uses field effect transistor (FET) based source feedback. It can also be used as source feedback in high power high bandgap device applicati...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	Helms David R
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS REGULATING SEMICONDUCTOR DEVICES SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A wide bandgap voltage reference circuit generates a temperature stable negative bias reference voltage for use in wide bandgap circuits. The reference circuit uses field effect transistor (FET) based source feedback. It can also be used as source feedback in high power high bandgap device applications, where constant current is required over process and thermal variations.