POWER SEMICONDUCTOR DEVICE
A power semiconductor device is provided with: the base plate 22 that is thermally connected to the power semiconductor element 21 so as for heat generated from the power semiconductor element 21 to be conducted to heat radiation fins 11; and the electrically conductive member 12 that is fixed to th...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A power semiconductor device is provided with: the base plate 22 that is thermally connected to the power semiconductor element 21 so as for heat generated from the power semiconductor element 21 to be conducted to heat radiation fins 11; and the electrically conductive member 12 that is fixed to the base plate 22, is electrically conducted to the base plate 22, and is connected to earth ground, wherein the projections 35 provided in the base plate 22 are fitted into notches provided in the electrically conductive member 12, and by deforming the projections 35, the electrically conductive member 12 is fixed to the base plate 22 and electrical conduction can be secured. |
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