METHOD FOR WET STRIPPING SILICON-CONTAINING ORGANIC LAYERS

A method for stripping material from a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a layer composed of silicon and organic material, and placing the workpiece in a wet clean chamber. In the wet clean chamber, the layer composed of silic...

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Bibliographische Detailangaben
Hauptverfasser:	Butterbaugh Jeffery W, Berg Erik R, Lauerhaas Jeffrey M, Matz Robert Thomas John, DeKraker David, Ratkovich Anthony S
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for stripping material from a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a layer composed of silicon and organic material, and placing the workpiece in a wet clean chamber. In the wet clean chamber, the layer composed of silicon and organic material is removed from the workpiece by exposing the surface of the workpiece to a first stripping agent containing a sulfuric acid composition, and then optionally exposing the surface of the workpiece to a second stripping agent containing dilute hydrofluoric acid (dHF).