SEMICONDUCTOR DEVICE

A semiconductor device disclosed herein includes a semiconductor substrate, a first main electrode in contact with a front surface of the semiconductor substrate, a second main electrode, a rear electrode in contact with a rear surface of the semiconductor substrate, a first capacitor electrode located on the front surface, a first insulating film located on the first capacitor electrode and a second capacitor electrode located on the first insulating film. The first insulated gate type switching element is provided between the first main electrode and the rear electrode. The second insulated gate type switching element is provided between the second main electrode and the rear electrode. One of the first main electrode and the second main electrode is electrically connected to the first capacitor electrode, and the other of the first main electrode and the second main electrode is electrically connected to the second capacitor electrode.