METAL-INSULATOR-METAL CAPACITOR ARCHITECTURE

A semiconductor structure includes a semiconductor substrate, semiconductor device(s) on the substrate, and metal resistor layer(s) above the semiconductor device(s), each metal resistor layer acting as a first plate for a MIM capacitor. The structure further includes a layer of insulator material a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SINGH Jagar, BEASOR Scott
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor structure includes a semiconductor substrate, semiconductor device(s) on the substrate, and metal resistor layer(s) above the semiconductor device(s), each metal resistor layer acting as a first plate for a MIM capacitor. The structure further includes a layer of insulator material above the first plate, and metal conductor layer(s) above the insulator layer, each metal conductor layer acting as a second plate for a MIM capacitor. Fabricating the MIM capacitor uses metal and insulator used in creating electrical connections to the semiconductor device(s), saving two masks typically used to fabricate a MIM capacitor.