METHODS FOR FABRICATING SEMICONDUCTOR STRUCTURE WITH CONDENSED SILICON GERMANIUM LAYER

METHODS FOR FABRICATING SEMICONDUCTOR STRUCTURE WITH CONDENSED SILICON GERMANIUM LAYER

Methods of forming condensed first layer and semiconductor structures formed from the methods are provided. The methods include, for instance providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon regio...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHILD Amy Lynn, TRIYOSO Dina H, SHI Haoran, WAHL Jeremy Austin, TONG Wei Hua
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods of forming condensed first layer and semiconductor structures formed from the methods are provided. The methods include, for instance providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon region; and performing at least one oxidation process of the semiconductor structure, the at least one oxidation process reducing a thickness of the upper region, wherein the performing facilitates diffusing to form a condensed layer over the substrate structure.