METAL FILM POLISHING SLURRY COMPOSITION, AND METHOD FOR REDUCING SCRATCHES GENERATED WHEN POLISHING METAL FILM BY USING SAME

The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	PARK Jong Dai, SHIN Jong Chul, PARK Chang Yong, PARK Min Sung, KIM Jae Hyun, LEE Goo Hwa
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered, the thermal stability of the slurry is improved and the size increase of particles in the slurry is suppressed, and a method for reducing scratches using the same. The method comprises the steps of applying a slurry composition for polishing a metal film to a substrate on which the metal film is formed, the slurry composition containing an organic solvent including a nitrogen atom and a glycol-based organic solvent; and making a polishing pad to be contacted to the substrate and moving the polishing pad with respect to the substrate, thereby removing at least part of the metal film from the substrate.