METAL HARDMASK COMPOSITION AND PROCESSES FOR FORMING FINE PATTERNS ON SEMICONDUCTOR SUBSTRATES

The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, wher...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MULLEN Salem K, YAO Huirong, WOLFER Elizabeth, DIOSES Alberto D, CHO JoonYeon
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.