STRUCTURE AND FORMATION METHOD OF FINFET DEVICE

STRUCTURE AND FORMATION METHOD OF FINFET DEVICE

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a fin channel structure over the semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of t...

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Bibliographische Detailangaben
1. Verfasser: CHING KUONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a fin channel structure over the semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin channel structure. The semiconductor device structure further includes a source/drain structure adjacent to the fin channel structure and a doped region between the semiconductor substrate and the fin channel structure. In addition, the semiconductor device structure includes a blocking layer between the fin channel structure and the doped region.