FORMATION OF FINFET JUNCTION

FORMATION OF FINFET JUNCTION

A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.

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Bibliographische Detailangaben
Hauptverfasser: KHAN SHAHRUKH AKBAR, DASGUPTA ARITRA, HASANUZZAMAN MOHAMMAD, AHMED SHAFAAT, NAG JOYEETA, CHOWDHURY MURSHED M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.