AMPLIFIERS WITH A SHORT PHASE PATH, PACKAGED RF DEVICES FOR USE THEREIN, AND METHODS OF MANUFACTURE THEREOF

An embodiment of a packaged radio frequency (RF) amplifier device includes a transistor and an inverse class-F circuit configured to harmonically terminate the device. The transistor has a control terminal and first and second current carrying terminals. The control terminal is coupled to an input lead of the device, and the first current carrying terminal is coupled to a voltage reference. The inverse class-F circuit is coupled between the second current carrying terminal and an output lead. The inverse class-F circuit includes a shunt circuit coupled between a cold point node and the voltage reference, where the cold point node corresponds to a second harmonic frequency cold point for the device. The shunt circuit adds a shunt negative susceptance at a fundamental frequency F0 to the inverse class-F circuit.