High Speed Photodetector

High Speed Photodetector

A photodetector is disclosed. A first layer of the photodetector has a first semiconductor material having a first band gap energy, a first electric field, and a first doping concentration. A second layer has a second semiconductor material having a second band gap energy higher than the first band...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHACINSKI MAREK GRZEGORZ, CHITICA NICOLAE PANTAZI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A photodetector is disclosed. A first layer of the photodetector has a first semiconductor material having a first band gap energy, a first electric field, and a first doping concentration. A second layer has a second semiconductor material having a second band gap energy higher than the first band gap energy, a non-zero second electric field smaller than the first electric field, and a second doping concentration. The second layer is interfaced with the first layer. A region between the first and second layers has a third doping concentration.