MEMORY ARRAY WITH READ ONLY CELLS HAVING MULTIPLE STATES AND METHOD OF PROGRAMMING THEREOF

MEMORY ARRAY WITH READ ONLY CELLS HAVING MULTIPLE STATES AND METHOD OF PROGRAMMING THEREOF

A read only memory (ROM) having a first row of ROM cells, a first conductive line along the first row of ROM cells, and a second conductive line along the first row of ROM cells. The ROM cells of the first row of ROM cells are selectively coupled during programming to the first conductive line and t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHANG SHAYAN, YANG JIANAN, GARNI BRAD J
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A read only memory (ROM) having a first row of ROM cells, a first conductive line along the first row of ROM cells, and a second conductive line along the first row of ROM cells. The ROM cells of the first row of ROM cells are selectively coupled during programming to the first conductive line and the second conductive line so that in a first mode of the ROM the first row of ROM cells provide a first combination of logic highs and logic lows and in a second mode of the memory the first row of ROM cells provide a second combination of logic highs and lows independent of the first combination of logic highs and logic lows.