CONFIGURATION OF JFET FOR BASE DRIVE BIPOLAR JUNCTION TRANSISTOR WITH AUTOMATIC COMPENSATION OF BETA VARIATION

A circuit for automatically compensating beta variation by driving base of BJT with JFET is disclosed. The circuit includes a first well, a second well, a third well, one or more leakage current devices, and a varying metal connection. The first well includes first JFET J1, second JFET J2, third JFET J3 and fourth JFET J4. The input voltage value is combination of emitter to base voltage of first BJT Q1, emitter to base voltage of second BJT Q2. The second well includes first BJT Q1, second BJT Q2 and second diode D2. The third well includes first diode snubber D1. The one or more leakage current devices are connected between base of Q1 and base Q2 to remove excess leakage current across the second well. The varying metal connection is connected across the first well, the second well and the third well to obtain beta value.