RESISTIVE MEMORY DEVICES
A resistive memory device includes: a first electrode; a variable resistive material layer that is formed on the first electrode and includes a metal oxide NxMOy (wherein 0.001
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| Zusammenfassung: | A resistive memory device includes: a first electrode; a variable resistive material layer that is formed on the first electrode and includes a metal oxide NxMOy (wherein 0.001 |
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