MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Provided is a semiconductor device including magnetic tunnel junctions, which are spaced apart from each other on a substrate, and each of which includes a free magnetic pattern, a first pinned magnetic pattern, and a tunnel barrier pattern therebetween. The semiconductor device further includes a s...

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Bibliographische Detailangaben
Hauptverfasser:	NAM KYUNGTAE, LEE KILHO, LEE SUNG CHUL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Provided is a semiconductor device including magnetic tunnel junctions, which are spaced apart from each other on a substrate, and each of which includes a free magnetic pattern, a first pinned magnetic pattern, and a tunnel barrier pattern therebetween. The semiconductor device further includes a separation structure interposed between the magnetic tunnel junctions. The separation structure includes a second pinned magnetic pattern and a first insulating pattern stacked to each other.