TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER

TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER

An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LE QUANG, LIU GUANGLI, SONG SUPING, YU HUALIANG, HO KUOK S, JI NIAN, LI YING, WANG SHUXIA, LIAO SIMON H, LIU XIAOYONG
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.