Semiconductor Device and Fabricating Method Thereof
A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect the first fm, a first elevated source/drain on the first fin on both sides of the first gate electrode, and a first metal alloy layer on an up...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect the first fm, a first elevated source/drain on the first fin on both sides of the first gate electrode, and a first metal alloy layer on an upper surface and sidewall of the first elevated source/drain. |
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