VOID MONITORING DEVICE FOR MEASUREMENT OF WAFER TEMPERATURE VARIATIONS

A method of monitoring a temperature of a plurality of regions in a substrate during a deposition process, the monitoring of the temperature including: forming, in the monitored plurality of regions, a plurality of metal structures each with a different metal pattern density, where each metal patter...

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Bibliographische Detailangaben
Hauptverfasser:	ESPOSITO MARK J, ADDERLY SHAWN A, PERIASAMY PRAKASH, DISTEFANO SAMANTHA D, GAMBINO JEFFREY P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A method of monitoring a temperature of a plurality of regions in a substrate during a deposition process, the monitoring of the temperature including: forming, in the monitored plurality of regions, a plurality of metal structures each with a different metal pattern density, where each metal pattern density corresponds to a threshold temperature at or above which metal voids and surface roughness are formed in the plurality of metal structures, and detecting metal voids and surface roughness in the plurality of metal structures to determine the temperature of the monitored plurality of regions.