HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET) VARIABLE GAIN AMPLIFIER HAVING VARIABLE TRANSCONDUCTANCE

HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET) VARIABLE GAIN AMPLIFIER HAVING VARIABLE TRANSCONDUCTANCE

A heterojunction semiconductor field effect transistor HFET having a pair of layers of different semiconductor materials forming a quantum well within the structure to support the 2DEG. Source, drain and gate electrodes are disposed above the channel. The HFET has a predetermined transconductance. A...

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Bibliographische Detailangaben
Hauptverfasser: SAUNDERS JEFFREY, REZA SHAHED, CHUMBES EDUARDO M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A heterojunction semiconductor field effect transistor HFET having a pair of layers of different semiconductor materials forming a quantum well within the structure to support the 2DEG. Source, drain and gate electrodes are disposed above the channel. The HFET has a predetermined transconductance. A transconductance control electrode varies an electric field within the structure under the channel to vary the shape of the quantum well and thereby the transconductance of the FET in accordance with a variable control signal fed to the transconductance control electrode.