METHOD OF FABRICATING SOURCE/DRAIN REGION AND SEMICONDUCTOR STRUCTURE HAVING SOURCE/DRAIN REGION FABRICATED BY THE SAME

A method of fabricating source/drain region in a substrate includes the steps of: introducing an ion beam-line of a first material to a surface of the substrate at a first energy and a first dosage to implant the substrate with dopants of a first conductive type; and subsequently, introducing a plas...

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Hauptverfasser:	YO CHUN WEI, CHOU YU NA, CHEN RONG ZHEN, WEI CHEN-KANG, CHUANG YI WEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	YO CHUN WEI CHOU YU NA CHEN RONG ZHEN WEI CHEN-KANG CHUANG YI WEI
description	A method of fabricating source/drain region in a substrate includes the steps of: introducing an ion beam-line of a first material to a surface of the substrate at a first energy and a first dosage to implant the substrate with dopants of a first conductive type; and subsequently, introducing a plasma of a second material to the surface. The ion beam-line is introduced, at a second energy and a second dosage to implant the substrate with dopants of the first conductive type. The second dosage is greater than the first dosage and the implant depth of the plasma is less than the implant depth of the ion beam-line.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	METHOD OF FABRICATING SOURCE/DRAIN REGION AND SEMICONDUCTOR STRUCTURE HAVING SOURCE/DRAIN REGION FABRICATED BY THE SAME
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