METHOD OF FABRICATING SOURCE/DRAIN REGION AND SEMICONDUCTOR STRUCTURE HAVING SOURCE/DRAIN REGION FABRICATED BY THE SAME

METHOD OF FABRICATING SOURCE/DRAIN REGION AND SEMICONDUCTOR STRUCTURE HAVING SOURCE/DRAIN REGION FABRICATED BY THE SAME

A method of fabricating source/drain region in a substrate includes the steps of: introducing an ion beam-line of a first material to a surface of the substrate at a first energy and a first dosage to implant the substrate with dopants of a first conductive type; and subsequently, introducing a plas...

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Bibliographische Detailangaben
Hauptverfasser: YO CHUN WEI, CHOU YU NA, CHEN RONG ZHEN, WEI CHEN-KANG, CHUANG YI WEI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of fabricating source/drain region in a substrate includes the steps of: introducing an ion beam-line of a first material to a surface of the substrate at a first energy and a first dosage to implant the substrate with dopants of a first conductive type; and subsequently, introducing a plasma of a second material to the surface. The ion beam-line is introduced, at a second energy and a second dosage to implant the substrate with dopants of the first conductive type. The second dosage is greater than the first dosage and the implant depth of the plasma is less than the implant depth of the ion beam-line.