METHOD OF PRODUCTION OF FIELD-EFFECT TRANSISTOR WITH LOCAL SOURCE/DRAIN INSULATION

A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer and a gate dielectric on a semiconductor substrate; forming source and drain depressions at the gate stack in the semiconductor substrate; forming a depression insulation layer at least in a bottom region and along the sidewalls of the source and drain depressions; and filling the at least partially insulated source and drain depressions with a filling layer for realizing source and drain regions.