METHOD AND APPARATUS FOR CHARACTERIZING METAL OXIDE REDUCTION

Method and apparatus for characterizing metal oxide reduction using metal oxide films formed by exposure to an oxygen plasma are disclosed. A substrate including a metal seed layer is exposed to the oxygen plasma to form a metal oxide of the metal seed layer, where the exposure can take place at a l...

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Bibliographische Detailangaben
Hauptverfasser:	OPOCENSKY EDWARD C, SPURLIN TIGHE A, HUANG LUDAN, LYONS RICHARD K, GHONGHADI SHANTINATH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING METALLURGY PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
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Beschreibung
Zusammenfassung:	Method and apparatus for characterizing metal oxide reduction using metal oxide films formed by exposure to an oxygen plasma are disclosed. A substrate including a metal seed layer is exposed to the oxygen plasma to form a metal oxide of the metal seed layer, where the exposure can take place at a low temperature and low pressure. Oxidized substrates formed in this manner provide metal oxides that are repeatable, uniform, and stable. The oxidized substrates can be stored for later use or exposed to a reducing treatment to the metal oxide to metal. In some implementations, exposure to the reducing treatment includes exposure to plasma of a reducing gas species, where the plasma of the reducing gas species and the oxygen plasma can both be produced in a remote plasma source.