METHOD FOR MANUFACTURING A SILICON CYLINDER BY GROWTH ON SEEDS IN A DIRECTED SOLIDIFICATION FURNACE

METHOD FOR MANUFACTURING A SILICON CYLINDER BY GROWTH ON SEEDS IN A DIRECTED SOLIDIFICATION FURNACE

A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism sha...

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Bibliographische Detailangaben
Hauptverfasser: CHAVRIER DENIS, AMARAL DE OLIVEIRA VANESSA, JOUINI ANIS, FORTIN GAUTIER, PIHAN ETIENNE, PLASSAT NELLY, CAMEL DENIS, MARIE BENOIT
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PERFORMING OPERATIONS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
WORKING CEMENT, CLAY, OR STONE
WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterised in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.