METHOD FOR OBTAINING MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE OBTAINED BY THIS METHOD

The object of the invention is a method for obtaining monocrystalline gallium-containing nitride, from gallium-containing feedstock in the environment of supercritical ammonia-containing solvent with the addition of a mineraliser, containing an element of Group I (IUPAC, 1989), wherein, in an autocl...

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Bibliographische Detailangaben
Hauptverfasser:	KUCHARSKI ROBERT, ZAJAC MARCIN, DORADZINSKI ROMAN
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY CONDUCTORS CRYSTAL GROWTH ELECTRICITY INSULATORS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The object of the invention is a method for obtaining monocrystalline gallium-containing nitride, from gallium-containing feedstock in the environment of supercritical ammonia-containing solvent with the addition of a mineraliser, containing an element of Group I (IUPAC, 1989), wherein, in an autoclave, two temperature zones are generated, i.e. a dissolution zone of lower temperature, containing feedstock, and, below it, a crystallisation zone of higher temperature, containing at least one seed, a dissolution process of the feedstock and a crystallisation process of the gallium-containing nitride on the at least one seed are carried out, characterised in that at least two additional components are introduced into the process environment, namely: a) an oxygen getter in a molar ratio to ammonia ranging from 0.0001 to 0.2, b) an acceptor dopant in a molar ratio to ammonia not higher than 0.001. The invention also includes monocrystalline gallium-containing nitride, obtained by this method.