APPARATUS AND METHOD FOR CURVATURE AND THIN FILM STRESS MEASUREMENT

Apparatus and method for curvature and thin film stress measurement are disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a specimen with a pitch. The d...

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Bibliographische Detailangaben
Hauptverfasser: FU CHUNG-HUA, CHUNG BUIN, WU CHUNG-YUAN, CHAMPETIER ROBERT
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Apparatus and method for curvature and thin film stress measurement are disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a specimen with a pitch. The detector receives the light beams reflected from the specimen. The curvature of the specimen is calculated via a distance between spots of the light beams on the detector or a size variation of one of the spots.