LOW COPPER/HIGH HALIDE ELECTROPLATING SOLUTIONS FOR FILL AND DEFECT CONTROL

LOW COPPER/HIGH HALIDE ELECTROPLATING SOLUTIONS FOR FILL AND DEFECT CONTROL

Certain embodiments herein relate to a method of electroplating copper into damascene features using a low copper, high halide concentration electrolyte having between about 4-10 g/L copper ions, between about 150-400 ppm halide ions, and about 2-15 g/L acid. Using the low copper electrolyte produce...

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Bibliographische Detailangaben
Hauptverfasser: REID JONATHAN DAVID, EDELBERG ERIK A, ZHOU JIAN
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS THEREFOR
CHEMISTRY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
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Zusammenfassung:Certain embodiments herein relate to a method of electroplating copper into damascene features using a low copper, high halide concentration electrolyte having between about 4-10 g/L copper ions, between about 150-400 ppm halide ions, and about 2-15 g/L acid. Using the low copper electrolyte produces a relatively high overpotential on the plating substrate surface, allowing for a slow plating process with few fill defects. The low copper electrolyte may have a relatively high cloud point. The use of a relatively high halide ion concentration may promote improved nucleation on a seed layer, resulting in fewer and less significant voids within the features.