SEMICONDUCTOR DEVICE INTEGRATING HIGH AND LOW VOLTAGE DEVICES

The present invention is directed to a method for forming multiple active components, such as bipolar transistors. MOSFETs, diodes, etc., on a semiconductor substrate so that active components with higher operation voltage may be formed on a common substrate with a lower operation voltage device and...

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Bibliographische Detailangaben
1. Verfasser: TSUCHIKO HIDEAKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention is directed to a method for forming multiple active components, such as bipolar transistors. MOSFETs, diodes, etc., on a semiconductor substrate so that active components with higher operation voltage may be formed on a common substrate with a lower operation voltage device and incorporating the existing proven process flow of making the lower operation voltage active components. The present invention is further directed to a method for forming a device of increasing operation voltage over an existing device of same functionality by adding a few steps in the early manufacturing process of the existing device therefore without drastically affecting the device performance.