EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE

EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE

A finFET with a quantum well having a conformal epitaxial well on a {100} crystallographic orientated fin. The structure may include a fin having a {100} crystallographic orientation; a conformal well covering the fin; and a conformal barrier covering the conformal well.

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Bibliographische Detailangaben
Hauptverfasser: KNUPP SETH L, HE HONG, TEEHAN SEAN, UPHAM ALLAN W, BERGENDAHL MARC A, DEMAREST JAMES J, SREENIVASAN RAGHAVASIMHAN, YANG CHIHAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A finFET with a quantum well having a conformal epitaxial well on a {100} crystallographic orientated fin. The structure may include a fin having a {100} crystallographic orientation; a conformal well covering the fin; and a conformal barrier covering the conformal well.