HIGH VOLTAGE MULTIPLE CHANNEL LDMOS

An integrated circuit and method having an LDMOS transistor with multiple current channels. A first current channel is above a buried p-type diffusion and a second one current channel is below the buried p-type diffusion.

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Bibliographische Detailangaben
Hauptverfasser:	PENDHARKAR SAMEER P, ZHANG YONGXI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	An integrated circuit and method having an LDMOS transistor with multiple current channels. A first current channel is above a buried p-type diffusion and a second one current channel is below the buried p-type diffusion.