SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device may include a plurality of memory chips stacked upon one another, and electrically coupled to one another through a plurality of first TSVs. The semiconductor memory device may include a plurality of second memory chips stacked separately from the first memory chips, an...

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Bibliographische Detailangaben
1. Verfasser:	LYM SANG KUG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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Beschreibung
Zusammenfassung:	A semiconductor memory device may include a plurality of memory chips stacked upon one another, and electrically coupled to one another through a plurality of first TSVs. The semiconductor memory device may include a plurality of second memory chips stacked separately from the first memory chips, and the plurality of second memory chips electrically coupled to one another through a plurality of second TSVs. The semiconductor memory device may include a plurality of external connection electrodes coupled to both to the first memory chips and the second memory chips. Wherein one of the first and second memory chips may be accessed in response to chip select signals inputted through the external connection electrodes.