DEVICE CONTACT STRUCTURES INCLUDING HETEROJUNCTIONS FOR LOW CONTACT RESISTANCE

DEVICE CONTACT STRUCTURES INCLUDING HETEROJUNCTIONS FOR LOW CONTACT RESISTANCE

A semiconductor device can include a channel region with a first semiconductor material for a majority carrier in the channel region during operation (on state) of the device and a metal contact. A source/drain region can include a semiconductor material alloy including a second semiconductor materi...

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Bibliographische Detailangaben
Hauptverfasser: OBRADOVIC BORNA JOSIP, RODDER MARK S, KITTL JORGE A, BOWEN ROBERT CHRISTOPHER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device can include a channel region with a first semiconductor material for a majority carrier in the channel region during operation (on state) of the device and a metal contact. A source/drain region can include a semiconductor material alloy including a second semiconductor material and at least one heterojunction located between the metal contact and the channel region, wherein the heterojunction forms a band-edge offset for the majority carrier that is less than or equal to about 0.2 eV.