DEEP COLLECTOR VERTICAL BIPOLAR TRANSISTOR WITH ENHANCED GAIN

DEEP COLLECTOR VERTICAL BIPOLAR TRANSISTOR WITH ENHANCED GAIN

An integrated circuit and method having a deep collector vertical bipolar transistor with a first base tuning diffusion. A MOS transistor has a second base tuning diffusion. The first base tuning diffusion and the second base tuning diffusion are formed using the same implant.

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Bibliographische Detailangaben
Hauptverfasser: HORNUNG BRIAN E, CHATTERJEE AMITAVA, TSAO ALWIN J, BO XIANG-ZHENG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit and method having a deep collector vertical bipolar transistor with a first base tuning diffusion. A MOS transistor has a second base tuning diffusion. The first base tuning diffusion and the second base tuning diffusion are formed using the same implant.