SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

According to one embodiment, there is provided a semiconductor device including a first semiconductor chip and a second semiconductor chip. The second semiconductor chip is mounted on a back surface of the first semiconductor chip. The first semiconductor chip includes a substrate, a back surface wi...

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1. Verfasser: HOSOMI EIICHI
Format: Patent
Sprache:eng
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Zusammenfassung:According to one embodiment, there is provided a semiconductor device including a first semiconductor chip and a second semiconductor chip. The second semiconductor chip is mounted on a back surface of the first semiconductor chip. The first semiconductor chip includes a substrate, a back surface wiring, a multi-layer wiring, a through silicon via, and a front surface electrode. The back surface wiring is arranged on a back surface of the substrate. The back surface wiring is electrically connected to a terminal of the second semiconductor chip. The multi-layer wiring is arranged on a front surface of the substrate. The through silicon via is configured to electrically connect the back surface wiring and the multi-layer wiring through the substrate. The front surface electrode is arranged on the multi-layer wiring and electrically connected to the multi-layer wiring.