SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND FURNACE LID

By suppressing a re-liquefaction of a processing gas in a reaction tube, the processing gas is maintained in a gaseous state. There is provided a substrate processing apparatus that includes a reaction tube, a supply unit, an exhaust unit, a first heating unit configured to heat a substrate in the r...

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Bibliographische Detailangaben
Hauptverfasser:	IZUMI MANABU, YAMAZAKI KEISHIN, NOGAMI KATSUAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES HEATING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL KILNS LIGHTING MECHANICAL ENGINEERING METALLURGY OVENS RETORTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION WEAPONS
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Beschreibung
Zusammenfassung:	By suppressing a re-liquefaction of a processing gas in a reaction tube, the processing gas is maintained in a gaseous state. There is provided a substrate processing apparatus that includes a reaction tube, a supply unit, an exhaust unit, a first heating unit configured to heat a substrate in the reaction tube, a second heating unit configured to heat a downstream portion of a reactant in gaseous state flowing in the reaction tube from the supply unit toward the exhaust unit, and a furnace lid, wherein the furnace lid includes a heat absorbing unit facing a lower surface of a lower end portion of the reaction tube and being heated by the second heating unit, the heat absorbing unit having an outer perimeter surface disposed outer than an inner circumference surface of the lower end portion.