SYNTHESIS OF SILICON CONTAINING MATERIALS USING LIQUID HYDROSILANE COMPOSITIONS THROUGH DIRECT INJECTION

An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrati...

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Hauptverfasser:	SAILER ROBERT A, HOEY JUSTIN, SRINIVASAN GURUVENKET
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON CORRECTING FLUIDS DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INKS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.