SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

A semiconductor device capable of reducing an inter-source electrode resistance RSS(on) and reducing a chip size is provided. A semiconductor device according to the present invention includes a chip partitioned into three areas including a first area, a second area, and a third area, and a common d...

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Bibliographische Detailangaben
Hauptverfasser:	KORENARI TAKAHIRO, SUZUKI KAZUTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device capable of reducing an inter-source electrode resistance RSS(on) and reducing a chip size is provided. A semiconductor device according to the present invention includes a chip partitioned into three areas including a first area, a second area, and a third area, and a common drain electrode provided on a back surface of the chip, in which the second area is formed between the first and third areas, a first MOSFET is formed in the first area and the third area, and a second MOSFET is formed in the second area.